K8D3216UB datasheet, memory equivalent, Samsung

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Features and benefits

GENERAL DESCRIPTION
* Single Voltage, 2.7V to 3.6V for Read and Write operations
* Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode) <.

Application

to require high-density and cost-effective nonvolatile read/write storage solutions. PIN DESCRIPTION Pin Name Pin Func.

Description

* Single Voltage, 2.7V to 3.6V for Read and Write operations
* Organization 4,194,304 x 8 bit (Byte mode) / 2,097,152 x 16 bit (Word mode)
* Fast Read Access Time : 70ns
* Read While Program/Erase Operation
* Dual Bank architectu.

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