K3N4C1000D-TE, K3N4C1000D-TC Datasheet - Samsung Electronics

K3N4C1000D-TE 8M-Bit CMOS Mask ROM

The K3N4C1000D-TC(E) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single .

K3N4C1000D-TE Features

* Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode)

* Fast access time : 100ns(Max.)

* Supply voltage : single +5V

* Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)

* Fully static operation

* All inputs and outpu

K3N4C1000D-TC_SamsungElectronics.pdf

K3N4C1000D-TE Datasheet Preview — This datasheet PDF includes multiple part numbers: K3N4C1000D-TE, K3N4C1000D-TC. Please refer to the document for exact specifications by model.

Datasheet Details

Part number:

K3N4C1000D-TE, K3N4C1000D-TC

Manufacturer:

Samsung Electronics

File Size:

59.85 KB

Description:

8m-bit cmos mask rom.

Note:

This datasheet PDF includes multiple part numbers: K3N4C1000D-TE, K3N4C1000D-TC.
Please refer to the document for exact specifications by model.

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TAGS

K3N4C1000D-TE K3N4C1000D-TC 8M-Bit CMOS Mask ROM Samsung Electronics

K3N4C1000D-TE Distributor