SPP8863 mosfet equivalent, n-channel mosfet.
* -60V/-18A,RDS(ON)=25mΩ@VGS=-10V
* -60V/-12A,RDS(ON)=33mΩ@VGS=-4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistan.
* Power Management in Note book
* Powered System
* DC/DC Converter
* Load Switch
FEATURES
* -60V/-1.
The SPP8863 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density, DMOS trench technology. The SPP8863 has been designed specifically to improve the overall efficiency of DC/DC converters using ei.
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