SPP8803B mosfet equivalent, p-channel mosfet.
* -20V/-7.0A,RDS(ON)=22mΩ@VGS=-4.5V
* -20V/-6.0 A,RDS(ON)=28mΩ@VGS=-2.5V
* -20V/-5.0 A, , RDS(ON)=40mΩ@VGS=-1.8V
* Super high density cell design for extr.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPP8803B is the Dual P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.
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