SPP3481B mosfet equivalent, p-channel mosfet.
* -30V/-5.2A,RDS(ON)=70mΩ@VGS=-10V
* -30V/-4.2A,RDS(ON)=95mΩ@VGS=-4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resist.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPP3481B is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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