SPP3481 mosfet equivalent, p-channel mosfet.
-30V/-5.2A,RDS(ON)= 55mΩ@VGS=- 10V -30V/-4.2A,RDS(ON)= 75mΩ@VGS=-4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maxi.
z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LC.
The SPP3481 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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