SPP2309 mosfet equivalent, p-channel mosfet.
* P-Channel
-20V/2.5A,RDS(ON)=0.35Ω@VGS=-4.5V -20V/1.5A,RDS(ON)=0.48Ω@VGS=-2.5V -20V/0.7A,RDS(ON)=0.75Ω@VGS=-1.8V
* Super high density cell design for extremely l.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPP2309 is the P-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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