SPN9926W mosfet equivalent, n-channel mosfet.
* 20V/4.0A,RDS(ON)=55mΩ@VGS=4.5V
* 20V/3.4A,RDS(ON)=70mΩ@VGS=2.5V
* 20V/2.8A,RDS(ON)=90mΩ@VGS=1.8V
* Super high density cell design for extremely low
RDS(.
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* DC/DC Converter
* Lo.
The SPN9926W is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.
Image gallery
TAGS
Manufacturer
Related datasheet
Download (Size : 429.46KB)