‹ 20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V ‹ 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC c.

z Power Management in Note book z Portable Equipment z Battery Powered System z DC/DC Converter z Load Switch z DSC z LC.

The SPN9926A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices ar.

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