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SPN9926A - N-Channel MOSFET

Description

The SPN9926A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • ‹ 20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V ‹ 20V/5.0A,RDS(ON)=42mΩ@VGS=2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum DC current capability ‹ SOP.
  • 8P package design.

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Datasheet Details

Part number SPN9926A
Manufacturer SYNC POWER
File Size 250.77 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN9926A Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN9926A N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN9926A is the Dual N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES ‹ 20V/6.0A,RDS(ON)=30mΩ@VGS=4.5V ‹ 20V/5.0A,RDS(ON)=42mΩ@VGS=2.
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