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SPN6099 - N-Channel MOSFET

Description

The SPN6099 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Features

  • 60V/80A,RDS(ON)= 4.0mΩ@VGS= 10V.
  • 60V/40A,RDS(ON)= 4.2mΩ@VGS= 6.0V.
  • 60V/10A,RDS(ON)= 4.4mΩ@VGS= 4.5V.
  • Super high density cell design for extremely low RDS (ON).
  • Exceptional on-resistance and maximum DC current capability.
  • TO-220-3L package design.

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Datasheet Details

Part number SPN6099
Manufacturer SYNC POWER
File Size 309.62 KB
Description N-Channel MOSFET
Datasheet download datasheet SPN6099 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SPN6099 N-Channel Enhancement Mode MOSFET DESCRIPTION The SPN6099 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application , notebook computer power management and other battery powered circuits where high-side switching . FEATURES  60V/80A,RDS(ON)= 4.0mΩ@VGS= 10V  60V/40A,RDS(ON)= 4.2mΩ@VGS= 6.0V  60V/10A,RDS(ON)= 4.4mΩ@VGS= 4.