SPN4392W mosfet equivalent, n-channel mosfet.
* 30V/13A,RDS(ON)=8mΩ@VGS=10V
* 30V/10A,RDS(ON)=12mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance and .
* Power Management in Note book
* Portable Equipment
* Battery Powered System
* High-Side DC/DC Converte.
The SPN4392W is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are par.
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