SPN4392 mosfet equivalent, n-channel mosfet.
30V/22A,RDS(ON)= 8mΩ@VGS=10V 30V/18A,RDS(ON)= 12mΩ@VGS=4.5V Super high density cell design for extremely low RDS (ON) Exceptional on-resistance and maximum DC cur.
z Power Management in Note book z Portable Equipment z Battery Powered System z High-Side DC/DC Converter z Load Switch .
The SPN4392 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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