‹ 20V/4.0A,RDS(ON)= 80mΩ@VGS=4.5V ‹ 20V/3.4A,RDS(ON)= 100mΩ@VGS=2.5V ‹ Super high density cell design for extremely low RDS (ON) ‹ Exceptional on-resistance and maximum D.

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPN2622 is the Dual N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior swi.

SPN200N04

SPN2012

SPN2016100MPSA

SPN20161R0NPSA

SPN20161R5NPSA

SPN20161R8NPSA

SPN20162R2MPSA

SPN20163R3MPSA

SPN20164R7MPSA

SPN20166R8MPSA

SPN2016R47NPSA

SPN20201R0NPTC

SPN20201R5NPTC

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