* N-Channel 20V/0.95A,RDS(ON)=310mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=360mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=460mΩ@VGS=1.8V
* Super high density cell design for extremely low .

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

The SPN2012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.

SPN2016100MPSA

SPN20161R0NPSA

SPN20161R5NPSA

SPN20161R8NPSA

SPN20162R2MPSA

SPN20163R3MPSA

SPN20164R7MPSA

SPN20166R8MPSA

SPN2016R47NPSA

SPN200N04

SPN20201R0NPTC

SPN20201R5NPTC

SPN20202R2MPTC

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts