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SPN2012 Datasheet, SYNC POWER

SPN2012 mosfet equivalent, n-channel mosfet.

SPN2012 Avg. rating / M : 1.0 rating-13

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SPN2012 Datasheet

Features and benefits


* N-Channel 20V/0.95A,RDS(ON)=310mΩ@VGS=4.5V 20V/0.75A,RDS(ON)=360mΩ@VGS=2.5V 20V/0.65A,RDS(ON)=460mΩ@VGS=1.8V
* Super high density cell design for extremely low .

Application

such as notebook computer power management and other battery powered circuits where high-side switching , low in-line po.

Description

The SPN2012 is the N-Channel enhancement mode power field effect transistors are produced using high cell density , DMOS trench technology. This high density process is especially tailored to minimize on-state resistance and provide superior switchin.

Image gallery

SPN2012 Page 1 SPN2012 Page 2 SPN2012 Page 3

TAGS

SPN2012
N-Channel
MOSFET
SYNC POWER

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