SPN120T06 mosfet equivalent, n-channel mosfet.
* 60V/108A,RDS(ON)=4.9mΩ@VGS=10V
* 60V/108A,RDS(ON)=7.5mΩ@VGS=4.5V
* Super high density cell design for extremely low
RDS (ON)
* Exceptional on-resistance.
* DC/DC Converter
* Load Switch
* Synchronous Buck Converter
* UPS
* Motor Control
* Power Tool
.
The SPN120T06 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are part.
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