ELM1314-30F-001 datasheet, fet equivalent, SUMITOMO

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Features and benefits

*High Output Power: P1dB=44.5dBm(typ.)
*High Gain: G1dB=5.5dB(typ.)
*High PAE: ηadd=22%(typ.)
*Broad Band: 13.75 to 14.5GHz
*Impedance Matched Zin/Zou.

Description

The ELM1314-30F/001 is a power GaAs FET that is internally matched for standard communication bands to provide optimum power and gain in a 50ohm system. ABSOLUTE MAXIMUM RATINGS Item Drain-Source Voltage (Tc=25deg.C) Gate-Source Voltage (Tc=25deg.C).

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