Datasheet4U Logo Datasheet4U.com

ELM13401CA-S - Single P-channel MOSFET

Datasheet Summary

Description

ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance.

Features

  • Vds=-30V.
  • Id=-4.2A (Vgs=-10V).
  • Rds(on) < 50mΩ (Vgs=-10V).
  • Rds(on) < 65mΩ (Vgs=-4.5V).
  • Rds(on) < 120mΩ (Vgs=-2.5V).
  • Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Ta=25°C Ta=70°C Pulsed drain current Power dissipation Tc=25°C Tc=70°C Junction and storage temperature range Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V -4.2 -3.5.

📥 Download Datasheet

Datasheet preview – ELM13401CA-S

Datasheet Details

Part number ELM13401CA-S
Manufacturer ELM Technology Corporation
File Size 401.12 KB
Description Single P-channel MOSFET
Datasheet download datasheet ELM13401CA-S Datasheet
Additional preview pages of the ELM13401CA-S datasheet.

📁 Similar Datasheet

  • ELM13422CA-S - N-Channel 60V MOSFET (VBsemi)
  • ELM1314-30F-001 - Ku-Band Internally Matched FET (SUMITOMO)
  • ELM1314-9F - Ku-Band Internally Matched FET (Eudyna)
  • ELM1085DG - Bipolar 3A LDO Voltage regulator (ELM)
  • ELM1085DG - Bipolar 3A LDO Voltage regulator (ELM)
  • ELM1085DG-33 - Bipolar 3A LDO Voltage regulator (ELM)
  • ELM1085SG - Bipolar 3A LDO Voltage regulator (ELM)
  • ELM1085SG-33 - Bipolar 3A LDO Voltage regulator (ELM)
  • ELM1085xG - Bipolar 3A LDO Voltage regulator (ELM)
  • ELM1117xG - Bipolar 1A LDO Voltage regulator (ELM Technology)
Other Datasheets by ELM Technology Corporation

Full PDF Text Transcription

Click to expand full text
Single P-channel MOSFET ELM13401CA-S ■General description ELM13401CA-S uses advanced trench technology to provide excellent Rds(on), low gate charge and low gate resistance. ■Features • Vds=-30V • Id=-4.2A (Vgs=-10V) • Rds(on) < 50mΩ (Vgs=-10V) • Rds(on) < 65mΩ (Vgs=-4.5V) • Rds(on) < 120mΩ (Vgs=-2.5V) ■Maximum absolute ratings Parameter Drain-source voltage Gate-source voltage Continuous drain current Ta=25°C Ta=70°C Pulsed drain current Power dissipation Tc=25°C Tc=70°C Junction and storage temperature range Symbol Vds Vgs Id Idm Pd Tj, Tstg Ta=25°C. Unless otherwise noted. Limit Unit Note -30 V ±12 V -4.2 -3.5 A1 -30 A 2 1.4 1.
Published: |