VNS1NV04P-E mosfet equivalent, fully autoprotected power mosfet.
Parameter
Symbol Value
Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage
RON ILIMH VCLAMP
250 m 1.7 A 40 V
* Linear current.
Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments.
Faul.
The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and.
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