Datasheet Details
| Part number | VNS1NV04DP-E |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 369.14 KB |
| Description | fully autoprotected Power MOSFET |
| Datasheet |
 VNS1NV04DP-E Datasheet
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Description
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package.
The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC up to 50KHz applications.
Features
- Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1) 1. Per each device. RDS(ON) ILIMH VCLAMP 250m 1.7A 40V.
- Linear current limitation.
- Thermal shutdown.
- Short circuit protection.
- Integrated clamp.
- Low current drawn from input pin.
- Diagnostic feedback through input pin.
- ESD protection.
- Direct access to the gate of the power mosfet (analog driving).
- Compatible with standard power.