VNS1NV04DP-E mosfet equivalent, fully autoprotected power mosfet.
Max On-state resistance(1) Current limitation (typ)(1) Drain-Source clamp voltage(1)
1. Per each device.
RDS(ON) ILIMH
VCLAMP
250m 1.7A 40V
* Linear current limi.
Built in thermal shutdown, linear current limitation and overvoltage clamp protects the chip in harsh environments.
Fau.
The VNS1NV04DP-E is a device formed by two monolithic OMNIFET II chips housed in a standard SO-8 package. The OMNIFET II are designed in STMicroelectronics VIPower™ M0-3 technology: they are intended for replacement of standard Power MOSFETs from DC .
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