VNN1NV04P-E datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Parameter Symbol Value Max on-state resistance (per ch.) Current limitation (typ) Drain-source clamp voltage RON ILIMH VCLAMP 250 m 1.7 A 40 V
* Linear current.

Application

Built in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Faul.

Description

The VNN1NV04P-E, VNS1NV04P-E are monolithic devices designed in STMicroelectronics VIPower M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications. Built in thermal shutdown, linear current limitation and.

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