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VNN7NV04P-E - OMNIFET II fully autoprotected Power MOSFET

General Description

The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

Key Features

  • Type VNN7NV04P-E VNS7NV04P-E.
  • RDS(on) 60 mΩ Ilim 6A Vclamp 40 V 2 SOT-223 1 2 3 SO-8 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive.

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Full PDF Text Transcription for VNN7NV04P-E (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for VNN7NV04P-E. For precise diagrams, and layout, please refer to the original PDF.

VNN7NV04P-E, VNS7NV04P-E OMNIFET II fully autoprotected Power MOSFET Features Type VNN7NV04P-E VNS7NV04P-E ■ ■ ■ ■ ■ ■ ■ ■ ■ RDS(on) 60 mΩ Ilim 6A Vclamp 40 V 2 SOT-223 1...

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V04P-E ■ ■ ■ ■ ■ ■ ■ ■ ■ RDS(on) 60 mΩ Ilim 6A Vclamp 40 V 2 SOT-223 1 2 3 SO-8 Linear current limitation Thermal shutdown Short circuit protection Integrated clamp Low current drawn from input pin Diagnostic feedback through input pin ESD protection Direct access to the gate of the Power MOSFET (analog driving) Compatible with standard Power MOSFET in compliance with the 2002/95/EC European Directive Description The VNN7NV04P-E, VNS7NV04P-E, are monolithic devices designed in STMicroelectronics VIPower™ M0-3 Technology, intended for replacement of standard Power MOSFETs from DC up to 50 kHz applications.

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