STY112N65M5 Datasheet, STMicroelectronics

Order code VDS at TJ max. STY112N65M5 710 V
* Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switching performance
* 100% .

* Switching applications RDS(on) max. 22 mΩ ID 96 A G(1) S(3) Description This device is an N-channel Power MOSF.

This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable.