STY139N65M5 mosfet equivalent, n-channel power mosfet.
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VDS at TJ max.
STY139N65M5
710 V
* Extremely low RDS(on)
* Low gate charge and input capacitance
* Excellent switching performance
* 100% .
* Switching applications
RDS(on) max. 17 mΩ
ID 130 A
G(1) S(3)
Description
This device is an N-channel Power MOS.
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable.
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