STY139N65M5
Features
Order code
VDS at TJ max.
710 V
- Extremely low RDS(on)
- Low gate charge and input capacitance
- Excellent switching performance
- 100% avalanche tested
Applications
- Switching applications
RDS(on) max. 17 mΩ
ID 130 A
G(1) S(3)
Description
This device is an N-channel Power MOSFET based on the MDmesh M5 innovative vertical process technology bined with the well-known Power MESH horizontal layout. The resulting product offers extremely low on-resistance, making it particularly suitable for applications requiring high power and superior efficiency.
AM01475v1_no Zen
Product status link STY139N65M5
Product summary
Order code
Marking
139N65M5
Package
Max247
Packing
Tube
DS8904
- Rev 5
- July 2022 For further information contact your local STMicroelectronics sales office.
.st.
Electrical ratings
Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
Gate-source voltage
Drain current (continuous)...
