Description
AM01476v1_tab
These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fastrecovery diode series.Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per area with one of the most effective switching behaviors available in the market for the most demanding high-efficiency bridge topologies and ZVS phase-shift converters.Product status link STW75N60DM6 STWA75N60DM6
Product summar
Features
- 3 2 1
TO-247
3 12
TO-247 long leads
D(2, TAB)
Order codes
VDS
RDS(on) max. STW75N60DM6 STWA75N60DM6
600 V
36 mΩ.
- Fast-recovery body diode.
- Lower RDS(on) per area vs previous generation.
- Low gate charge, input capacitance and resistance.
- 100% avalanche tested.
- Extremely high dv/dt ruggedness.
- Zener-protected
ID 72 A
G(1).