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STWA70N60DM6 - N-CHANNEL Power MOSFET

This page provides the datasheet information for the STWA70N60DM6, a member of the STW70N60DM6 N-CHANNEL Power MOSFET family.

Description

These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.

Features

  • 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected ID 62 A G(1).

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Datasheet preview – STWA70N60DM6

Datasheet Details

Part number STWA70N60DM6
Manufacturer STMicroelectronics
File Size 344.33 KB
Description N-CHANNEL Power MOSFET
Datasheet download datasheet STWA70N60DM6 Datasheet
Additional preview pages of the STWA70N60DM6 datasheet.

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Full PDF Text Transcription

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STW70N60DM6, STWA70N60DM6 Datasheet N-channel 600 V, 36 mΩ typ., 62 A, MDmesh DM6 Power MOSFETs in TO‑247 and TO‑247 long leads packages Features 3 2 1 TO-247 3 2 1 TO-247 long leads D(2, TAB) Order code VDS RDS(on) max. STW70N60DM6 STWA70N60DM6 600 V 42 mΩ • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected ID 62 A G(1) Applications • Switching applications S(3) Description AM01476v1_tab These high-voltage N-channel Power MOSFETs are part of the MDmesh DM6 fast-recovery diode series.
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