STWA60N043DM9 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS RDS(on) max. ID STWA60N043DM9 600 V 43 mΩ 55 A
* Fast-recovery body diode
* Worldwide best RDS(on) per area among silicon-based fast recov.

Application

* Power supplies and converters
* LLC resonant converter Description This N-channel Power MOSFET is based on th.

Description

This N-channel Power MOSFET is based on the most innovative super-junction MDmesh DM9 technology, suitable for medium/high voltage MOSFETs featuring very low RDS(on) per area coupled with a fast-recovery diode. The silicon-based DM9 technology benefi.

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