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STW8NA80 Datasheet N-channel Enhancement Mode Power Mos Transistors

Manufacturer: STMicroelectronics

Overview: ® STW8NA80 STH8NA80FI N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS PRELIMINARY DATA TYPE STW 8NA80 STH8NA80F I www.DataSheet4U.com s s s s s s s V DSS 800 V 800 V R DS(on) < 1.50 Ω < 1.50 Ω ID 7.2 A 4.5 A TYPICAL RDS(on) = 1.

General Description

This series of POWER MOSFETS represents the most advanced high voltage technology.

The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance.

APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol Parameter TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Valu e STW 8NA80 ST H8NA80FI 800 800 ± 30 o Unit V DS V DGR V GS ID ID I DM ( • ) P tot V ISO T s tg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 oC Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max.

STW8NA80 Distributor

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