STW8NA80 Datasheet | STMicroelectronics

DESCRIPTION This series of POWER MOSFETS represents the most advanced high voltage technology. The optimized cell layout coupled with a new proprietary edge termination concur to give the device low RDS(on) and gate charge, unequalled ruggedness and superior switching performance. APPLICATIONS s HIGH CURRENT, HIGH SPEED SWITCHING s SWITCH MODE POWER SUPPLIES (SMPS) s DC-AC CONVERTERS FOR WELDING EQUIPMENT AND UNINTERRUPTIBLE POWER SUPPLIES AND MOTOR DRIVE ABSOLUTE MAXIMUM RATINGS Symb ol Parameter TO-247 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM Valu e STW 8NA80 ST H8NA80FI 800 800 ± 30 o Unit V DS V DGR V GS ID ID I DM ( - ) P tot V ISO T s tg Tj Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 C Drain Current (pulsed) T otal Dissipation at Tc = 25 o C Derating Factor Insulation W ithstand Voltage (DC) Storage T emperature Max. O perating Junct ion T emperature o V V V 4.5 2.8 28.8 70 0.56 4000 A A A W W/ o C V o o 7.2 4.5 28.8 175 1.4  -65 to 150 150 (- ) Pulse width limited by safe operating area October 1998 1/6 STW8NA80 STH8NA80FI THERMAL DATA TO-247 R thj -case R thj -amb R thc-sink Tl Thermal Resistance Junction-case Max 0.71 30 0.1 300 ISOWATT 218 1.78 o o o C/W C/W C/W o C Thermal Resistance Junction-ambient Max Thermal Resistance Case-sink Typ Maximum Lead Temperature F or Soldering Purpose AVALANCHE CHARACTERISTICS .. Symbo l IAR E AS Parameter Avalanche Current, Repetitive or Not-Repetitive (pulse width limited by Tj max, δ < 1%) Single Pulse Avalanche Energy (starting Tj = 25 o C, ID = IAR , V DD = 50 V) Max Value 7.2 700 Unit A m J ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 T c = 100 o C Min. 800 50 500 100 Typ. Max. Unit V µA µA n A V DS = Max Rating Zero Gate Voltage Drain...