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STW8NC70Z - N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS

Datasheet Summary

Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/8 STW8NC70.

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Datasheet Details

Part number STW8NC70Z
Manufacturer STMicroelectronics
File Size 199.85 KB
Description N-CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS
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Full PDF Text Transcription

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N-CHANNEL 700V - 1.1 Ω - 7A TO-247 Zener-Protected PowerMESH™III MOSFET TYPE STW8NC70Z www.DataSheet4U.com s TYPICAL s STW8NC70Z VDSS 700 V RDS(on) < 1.38 Ω ID 7A s s s RDS(on) = 1.1 Ω EXTREMELY HIGH dv/dt CAPABILITY GATETO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED TO-247 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
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