STW68N65DM6-4AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code STW68N65DM6-4AG VDS 650 V RDS(on) max. 39 mΩ ID 72 A Gate(4) Driver source (3) 2 34 1 TO247-4 Drain(1, TAB)
* Designed for automotive applications

Application

* Fast-recovery body diode
* Lower RDS(on) per area vs previous generation
* Low gate charge, input capacita.

Description

This high-voltage N-channel Power MOSFET is part of the MDmesh DM6 fastrecovery diode series. Compared with the previous MDmesh fast generation, DM6 combines very low recovery charge (Qrr), recovery time (trr) and excellent improvement in RDS(on) per.

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