STW55NM60N mosfet equivalent, n-channel mosfet.
Type STW55NM60N
VDSS (@Tjmax)
650 V
RDS(on) max
< 0.060 Ω
ID 51 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resist.
Description
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary P.
This series of devices is designed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge..
Image gallery
TAGS
Download