STW55NM50N mosfet equivalent, n-channel mosfet.
Type
VDSS (@Tjmax)
RDS(on) max
ID
STW55NM50N 550 V <0.054 Ω 54 A
t(s)
* 100% avalanche tested c
* Low input capacitance and gate charge du
* Low gate input .
soleDescription ObThis series of devices implements second -generation MDmesh™ technology. This )revolutionary Power MOS.
ObThis series of devices implements second -generation MDmesh™ technology. This )revolutionary Power MOSFET associates a new t(svertical structure to the company’s strip layout to cyield one of the world’s lowest on-resistance and ugate charge. It is.
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