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STW48NM60N - N-CHANNEL MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Order codes STW48NM60N VDSS @ TJmax 650 V RDS(on) max < 0.07 Ω ID 44 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW48NM60N N-channel 600 V, 0.055 Ω typ., 44 A MDmesh™ II Power MOSFET in a TO-247 package Datasheet — production data Features Order codes STW48NM60N VDSS @ TJmax 650 V RDS(on) max < 0.07 Ω ID 44 A ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance Applications ■ Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 3 2 1 TO-247 Figure 1. Internal schematic diagram '  *  6  $0Y Table 1.
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