Order codes STW48NM60N VDSS @ TJmax 650 V RDS(on) max < 0.07 Ω ID 44 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input r.

* Switching applications Description This device is an N-channel Power MOSFET developed using the second generatio.

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and .

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