Order code STW45N60DM2AG VDS @ TJmax. 650 V RDS(on) max. 0.093 Ω ID 34 A PTOT 250 W 3 2 1 TO-247 Figure 1: Internal schematic diagram
* Designed for automotive .

and AEC-Q101 qualified
* Fast-recovery body diode
* Extremely low gate charge and input capacitance
* Low on.

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters.

Since 2006. D4U Semicon.   |   Contact Us   |   Privacy Policy   |   Purchase of parts