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Isc N-Channel MOSFET Transistor
INCHANGE Semiconductor
STW45NM50
·FEATURES ·Low input capacitance and gate charge ·Low gate input resistance ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device
performance and reliable operation
·APPLICATIONS ·The MDmesh™ family is very suitable for increasing
power density of high voltage converters allowing system miniaturization and higher efficiencies.
·ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VALUE
VDSS
Drain-Source Voltage
550
VGSS ID IDM
Gate-Source Voltage
Drain Current-Continuous@TC=25℃ TC=100℃
Drain Current-Single Pulsed
±30
45 28.4
180
PD
Total Dissipation
417
Tch
Max.
STW45NM50 Datasheet
