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STW28NM60ND - N-Channel MOSFET

Description

technology.

Features

  • Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.150 Ω 23 A STW28NM60ND.
  • Intrinsic fast-recovery body diode.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB28NM60ND, STF28NM60ND, STP28NM60ND, STW28NM60ND N-channel 600 V, 0.13 Ω typ., 23 A FDmesh™ II Power MOSFETs in D²PAK, TO-220FP, TO-220 and TO-247 packages Datasheet - production data TAB 2 3 1 D2PAK TAB 3 2 1 TO-220FP 3 2 1 TO-220 3 2 1 TO-247 Figure 1. Internal schematic diagram ' Ć7$% *  Features Order codes VDS @ TJ max. RDS(on) max ID STB28NM60ND STF28NM60ND 650 V STP28NM60ND 0.
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