STW23N85K5 mosfet equivalent, n-channel power mosfet.
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VDS RDS(on) max. ID
PTOT
STW23N85K5 850 V 0.275 Ω 19 A 250 W
* Industry’s lowest RDS(on) x area
* Industry’s best figure of merit (FoM)
* Ultr.
* Switching applications
Description
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 tech.
This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring supe.
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