STW20N60M2-EP datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS RDS(on) max. STW20N60M2-EP 600 V 0.278 Ω
* Extremely low gate charge
* Excellent output capacitance (COSS) profile
* Very low turn-off s.

Application

* Switching applications
* Tailored for very high frequency converters (f > 150 kHz) Description This device is.

Description

This device is an N-channel Power MOSFET developed using MDmesh™ S(3) M2 enhanced performance (EP) technology. Thanks to its strip layout and an AM01476v1_No_tab improved vertical structure, the device exhibits low on-resistance, optimized switching .

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