STW20N90K5 datasheet, mosfet equivalent, STMicroelectronics

Features and benefits

Order code VDS STW20N90K5 900 V
* Industry’s lowest RDS(on) x area
* Industry’s best FoM (figure of merit)
* Ultra-low gate charge
* 100% avalanche t.

Application

* Switching applications RDS(on ) max. 0.25 Ω ID 20 A Description This very high voltage N-channel Power MOSFET i.

Description

This very high voltage N-channel Power MOSFET is designed using MDmesh™ K5 S(3) AM01475V1 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications.

Image gallery