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STW22NM60N - N-Channel MOSFET

Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • Product(s) D(2) olete G(1) Obs S(3) t(s) - AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STW22NM60N 650 V 0.22 Ω 16 A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STW22NM60N Datasheet N-channel 600 V, 0.20 Ω typ., 16 A MDmesh™ II Power MOSFET in a TO-247 package Features Product(s) D(2) olete G(1) Obs S(3) t(s) - AM01475v1_noZen_noTab Order code VDS @ Tjmax. RDS(on)max. ID STW22NM60N 650 V 0.22 Ω 16 A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters.
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