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STU95N2LH5 - N-channel Power MOSFET

Description

This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit).

Table 1.

Features

  • Type STD95N2LH5 STP95N2LH5 STU95N2LH5.
  • VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on).
  • Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 3 1 2 TO-220.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD95N2LH5 STP95N2LH5, STU95N2LH5 N-channel 25 V, 0.0038 Ω, 80 A, DPAK, IPAK, TO-220 STripFET™ V Power MOSFET Features Type STD95N2LH5 STP95N2LH5 STU95N2LH5 ■ ■ ■ ■ VDSS 25 V 25 V 25 V RDS(on) max < 0.0045 Ω < 0.0049 Ω < 0.0049 Ω ID 3 80 A 80 A 80 A 1 3 2 1 DPAK IPAK RDS(on) * Qg industry benchmark Extremely low on-resistance RDS(on) High avalanche ruggedness Low gate drive power losses 3 1 2 TO-220 Application ■ Switching applications Figure 1. Internal schematic diagram $4!"OR Description This STripFET™V Power MOSFET technology is among the latest improvements, which have been especially tailored to achieve very low on-state resistance providing also one of the best-in-class FOM (figure of merit). ' 3 !-V Table 1.
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