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STU9NC80ZI - N-CHANNEL 800V - 0.82ohm

Download the STU9NC80ZI datasheet PDF. This datasheet also covers the STU9NC80Z variant, as both devices belong to the same n-channel 800v - 0.82ohm family and are provided as variant models within a single manufacturer datasheet.

Description

The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source.

Features

  • OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener voltage is appropiate to achieve an efficient and cost-effective intervention to protect the device’s integrity. These integrated Zener diodes thus avoid the usage of external components. 3/10 STU9NC8.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STU9NC80Z_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

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Other Datasheets by STMicroelectronics

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Full PDF Text Transcription

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N-CHANNEL 800V - 0.82Ω - 8.6A Max220/I-Max220 Zener-Protected PowerMESH™III MOSFET TYPE STU9NC80Z STU9NC80ZI s s s s s s STU9NC80Z STU9NC80ZI VDSS 800 V 800 V RDS(on) <0.9Ω <0.9Ω ID 8.6 A 8.6 A TYPICAL RDS(on) = 0.82Ω EXTREMELY HIGH dv/dt CAPABILITY GATE-TO-SOURCE ZENER DIODES 100% AVALANCHE TESTED VERY LOW INTRINSIC CAPACITANCES GATE CHARGE MINIMIZED 1 2 3 Max220 I-Max220 DESCRIPTION The third generation of MESH OVERLAY ™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-to-back Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variety of single-switch applications.
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