Order code VDS RDS(on) max. ID STD11N65M2 STP11N65M2 650 V 0.68 Ω 7A STU11N65M2
* Extremely low gate charge
* Excellent output capacitance (COSS) profi.

* Switching applications Description These devices are N-channel Power MOSFETs developed using the MDmesh M2 techno.

These devices are N-channel Power MOSFETs developed using the MDmesh M2 technology. Thanks to their strip layout and improved vertical structure, these devices exhibit low on-resistance and optimized switching characteristics, rendering them suitable.

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