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STU11NM60ND - Power MOSFET

Description

The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology.

Features

  • Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed.
  • The worldwide best RDS(on).
  • area amongst the fast recovery diode devices.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.
  • Extremely high dv/dt and avalanche capabilities.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD11NM60ND, STF/I11NM60ND STP11NM60ND, STU11NM60ND N-channel 600 V, 0.37 Ω, 10 A, FDmesh™ II Power MOSFET I2PAK, TO-220, TO-220FP, IPAK, DPAK Features Order codes VDSS (@Tjmax) RDS(on) max ID STD11NM60ND STF11NM60ND STI11NM60ND STP11NM60ND STU11NM60ND 650 V < 0.45 Ω 10 A 10 A(1) 10 A 10 A 10 A 1. Limited only by maximum temperature allowed ■ The worldwide best RDS(on)* area amongst the fast recovery diode devices ■ 100% avalanche tested ■ Low input capacitance and gate charge ■ Low gate input resistance ■ Extremely high dv/dt and avalanche capabilities Application Switching applications Description The device is an N-channel FDmesh™ II Power MOSFET that belongs to the second generation of MDmesh™ technology.
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