Order code VDS RDS(on) max. ID STS6P3LLH6 30 V 30 mΩ 6A
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate dr.

* Switching applications Description This device is a P-channel Power MOSFET developed using the STripFET H6 techno.

This device is a P-channel Power MOSFET developed using the STripFET H6 technology with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages. Product status link STS6P3LLH6 Product summary Order code S.

STS6PF30L

STS6308

STS6409

STS6415

STS6601

STS6604L

STS6DNF30L

STS6DNF30V

STS6N20

STS6NF20V

STS-2308-01

STS-8857

STS01DTP06

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