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STS5DP3LLH6 - Dual P-CHANNEL POWER MOSFET

Description

This device is a DUAL P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • SO-8 Figure 1. Internal schematic diagram Order code STS5DP3LLH6 VDS 30 V RDS(on) max ID 0.06 Ω at 10 V 5 A.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate drive power losses.

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Datasheet preview – STS5DP3LLH6

Datasheet Details

Part number STS5DP3LLH6
Manufacturer STMicroelectronics
File Size 355.29 KB
Description Dual P-CHANNEL POWER MOSFET
Datasheet download datasheet STS5DP3LLH6 Datasheet
Additional preview pages of the STS5DP3LLH6 datasheet.

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Full PDF Text Transcription

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STS5DP3LLH6 DUAL P-Channel 30 V, 0.04 Ω typ., 5 A STripFET™ VI DeepGATE™ Power MOSFET in a SO-8 package Datasheet - preliminary data Features SO-8 Figure 1. Internal schematic diagram Order code STS5DP3LLH6 VDS 30 V RDS(on) max ID 0.06 Ω at 10 V 5 A • RDS(on)* Qg industry benchmark • Extremely low on-resistance RDS(on) • High avalanche ruggedness • Low gate drive power losses Applications • Switching applications Description This device is a DUAL P-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. Order code STS5DP3LLH6 Table 1.
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