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STS5N15F4 - Power MOSFETs

General Description

This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances.

Table 1.

Key Features

  • Type STS5N15F4.
  • VDSS 150 V RDS(on) max < 0.063 Ω ID 5A N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance SO-8.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com STS5N15F4 N-channel 150 V, 0.057Ω, 5 A, SO-8 STripFET™ DeepGATE™ Power MOSFET Features Type STS5N15F4 ■ ■ ■ ■ VDSS 150 V RDS(on) max < 0.063 Ω ID 5A N-channel enhancement mode 100% avalanched rated Low gate charge Very low on-resistance SO-8 Application ■ Switching applications Figure 1. Internal schematic diagram Description This STripFET™ DeepGATE™ Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance, with a new gate structure, providing superior switching performances. Table 1. Device summary Marking 5U15Package SO-8 Packaging Tape and reel Order code STS5N15F4 July 2009 Doc ID 16083 Rev 1 1/11 www.st.com 11 www.DataSheet4U.