STS26N3LLH6 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Type STS26N3LLH6 VDSS 30 V RDS(on) max 0.0044 Ω
* RDS(on) * Qg industry benchmark
* Extremely low on-resistance RDS(on)
* High avalanche ruggedness
* .

Application

* Switching applications Description This product utilizes the 6th generation of design rules of ST’s proprietary S.

Description

This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, with a new gate structure.The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 8 76 5 1 2 34 SO-8 Figure 1. Internal schematic diag.

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