STS20N3LLH6 datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Type VDSS RDS(on) max ID STS20N3LLH6 30 V 0.0047 Ω 20 A t(s)
* RDS(on) * Qg industry benchmark uc
* Extremely low on-resistance RDS(on) d
* High avalanche.

Application

- ObDescription t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, .

Description

t(s)This product utilizes the 6th generation of design rules of ST’s proprietary STripFET™ technology, ucwith a new gate structure.The resulting Power dMOSFET exhibits the lowest RDS(on) in all Obsolete Propackages. SO-8 Figure 1. Internal schematic.

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