STS10P4LLF6 mosfet equivalent, p-channel power mosfet.
Order code
VDS
STS10P4LLF6
-40 V
* Very low on-resistance
* Very low gate charge
* High avalanche ruggedness
* Low gate drive power loss
RDS(on) max.
* Switching applications
Description
This device is a P-channel Power MOSFET developed using the STripFET F6 techno.
This device is a P-channel Power MOSFET developed using the STripFET F6 technology, with a new trench gate structure. The resulting Power MOSFET exhibits very low RDS(on) in all packages.
Product status link STS10P4LLF6
Product summary
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