STS11NF30L Datasheet | STMicroelectronics

DESCRIPTION This application specific Power Mosfet is the third generation of STMicroelectronics unique ”Single Feature Size™” strip-based process. The resulting transistor shows the best trade-off between on-resistance and gate charge. When used as high and low side in buck regulators, it gives the best performance in terms of both conduction and switching losses. This is extremely important for motherboards where fast switching and high efficiency are of paramount importance. APPLICATIONS s SPECIFICALLY DESIGNED AND OPTIMISED FOR HIGH EFFICIENCY CPU CORE DC/DC CONVERTERS FOR MOBILE PCs SO-8 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symb ol V DS V DGR V GS ID Parameter Drain-source Voltage (V GS = 0) Drain- gate Voltage (R GS = 20 k Ω) G ate-source Voltage Drain Current (continuous) at Tc = 25 C Drain Current (continuous) at Tc = 100 o C Drain Current (pulsed) T otal Dissipation at Tc = 25 C o o Value 30 30 ± 20 11 7 44 2.5 Un it V V V A A A W I DM ( - ) P tot (- ) Pulse width limited by safe operating area April 2000 1/6 THERMAL DATA R thj -amb Tj T s tg (- )Thermal Resistance Junction-ambient Maximum Operating Junction T emperature Storage Temperature 50 150 -65 to 150 o C/W o C o C (- ) Mounted on FR-4 board (t ≤ 10sec) ELECTRICAL CHARACTERISTICS (Tcase = 25 o C unless otherwise specified) OFF Symbo l V (BR)DSS I DSS IGSS Parameter Drain-source Breakdown Voltage Test Con ditions I D = 250 µ A V GS = 0 Min. 30 1 10 ± 100 Typ. Max. Unit V µA µA n A V DS = Max Rating Zero Gate Voltage Drain Current (V GS = 0) V DS = Max Rating Gate-body Leakage Current (VDS = 0) V GS = ± 20 V T c = 125 o C ON (∗) Symbo l V GS(th) R DS(on) I D(o n) Parameter Gate Threshold Voltage V DS = V GS Static Drain-source On Resistance On State Drain Current V GS = 10 V V GS = 5 V Test Con ditions ID = 250 µ A ID = 5.5 A I D = 5.5 A 11 Min. 1 0.009 0.014 0.012 0.0185 Typ. Max. Unit V Ω Ω A V DS > ID(o n) x R DS(on )ma x V GS = 10 V DYNAMIC Symbo l g f s (∗ )...